Preparation and Charge Transfer at Sb2Se3/1L-MoS2 Heterojunction
نویسندگان
چکیده
Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical design applications ultrathin optoelectronic devices. However, preparation HJs transition metal dichalcogenide (TMDC) thin layers still challenging. Herein, a chemical vapor deposition (CVD) method was used prepare monolayer MoS2(1L-MoS2) layers. A dry transfer subsequently build their HJs. Individual PL spectra mapping results obtained at indicate charge injection from 1L-MoS2 into flake, which further confirmed contact potential difference (CPD) Kelvin probe force microscopy (KPFM). Further measurements type-Ⅰ band alignment with offset finally determined be 157 meV. The Sb2Se3/1L-MoS2 will benefit rational novel devices based on 2D absorber working in visible light.
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ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11162574